hys64d16020gd Infineon Technologies Corporation, hys64d16020gd Datasheet - Page 12

• Manufacturer Part Number: hys64d16020gd
• Description: Unbuffered Ddr Sdram So Modules
• Manufacturer: Infineon Technologies Corporation

3
3.1
Table 6
Parameter
Voltage on I/O pins relative to
Voltage on inputs relative to
Voltage on
Voltage on
Operating temperature (ambient)
Storage temperature (plastic)
Power dissipation (per SDRAM component)
Short circuit output current
Attention: Permanent damage to the device may occur if “Absolute Maximum Ratings” are exceeded. This
Data Sheet
is a stress rating only, and functional operation should be restricted to recommended operation
conditions. Exposure to absolute maximum rating conditions for extended periods of time may
affect device reliability and exceeding only one of the values may cause irreversible damage to
the integrated circuit.
V
V
Electrical Characteristics
Operating Conditions
Absolute Maximum Ratings
DD
DDQ
supply relative to
supply relative to
V
SS
V
SS
V
V
SS
SS
Symbol
V
V
V
V
T
T
P
I
OUT
A
STG
IN
IN
DD
DDQ
D
,
V
12
OUT
min.
–0.5
–0.5
–0.5
–0.5
0
-55
–
–
Unbuffered DDR SDRAM SO Modules
typ.
–
–
–
–
–
–
2.0
50
Values
HYS64D16020GD(L)-[7/8]-A
max.
V
0.5
+3.6
+3.6
+3.6
+70
+150
–
–
DDQ
Electrical Characteristics
+
11042003-YIV7-VK6M
Unit Note/ Test
V
V
V
V
°C
°C
W
mA
Rev. 1.02, 2004-01
Condition
–
–
–
–
–
–
–
–