hys64d16020gd Infineon Technologies Corporation, hys64d16020gd Datasheet - Page 19
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hys64d16020gd
Manufacturer Part Number
hys64d16020gd
Description
Unbuffered Ddr Sdram So Modules
Manufacturer
Infineon Technologies Corporation
Datasheet
1.HYS64D16020GD.pdf
(22 pages)
4
Table 11
Byte#
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
Data Sheet
SPD Contents
SPD Codes for PC2100 & PC1600
Description
Number of SPD Bytes
Total Bytes in Serial PD
Memory Type
Number of Row Addresses
Number of Column Addresses
Number of DIMM Ranks
Module Data Width
Module Data Width (cont’d)
Module Interface Levels
SDRAM Cycle Time at CL = 2.5
Access Time from Clock at
CL = 2.5
DIMM config
Refresh Rate/Type
SDRAM Width, Primary
Error Checking SDRAM Data
Witdh
Minimum Clock Delay for Back-
to-Back Random Column
Address
Burst Length Supported
Number of SDRAM Ranks
Supported CAS Latencies
CS Latencies
WE Latencies
SDRAM DIMM Module Attributes unbuffered
SDRAM Device Attributes:
General
Min. Clock Cycle Time at CAS
Latency = 2
Access Time from Clock for
CL = 2
Minimum Clock Cycle Time for
CL = 1.5
Access Time from Clock at
CL = 1.5
Minimum Row Precharge Time
128
256
DDR-SDRAM
12
9
2
×64
0
SSTL_2.5
7 ns/8 ns
0.75 ns/0.8 ns
non-ECC/ECC
Self-Refresh 15.6 ms
×16
na
t
2, 4 & 8
4
CAS latency = 2 & 2.5
CS latency = 0
Write latency = 1
Concurrent Auto Precharge,
weak driver
7.5 ns/10 ns
0.75 ns/0.8 ns
not supported
not supported
20 ns
CCD
= 1 CLK
19
Unbuffered DDR SDRAM SO Modules
HYS64D16020GD(L)-[7/8]-A
128MB
x64
2ranks
–7
HEX.
80
08
07
0C
09
02
40
00
04
70
75
00
80
10
00
01
0E
04
0C
01
02
20
C1
75
75
00
00
50
11042003-YIV7-VK6M
Rev. 1.02, 2004-01
SPD Contents
128MB
x64
2ranks
–8
HEX.
80
08
07
0C
09
02
40
00
04
80
80
02
80
10
00
01
0E
04
0C
01
02
20
C1
A0
80
00
00
50