hys64d16020gd Infineon Technologies Corporation, hys64d16020gd Datasheet - Page 17
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hys64d16020gd
Manufacturer Part Number
hys64d16020gd
Description
Unbuffered Ddr Sdram So Modules
Manufacturer
Infineon Technologies Corporation
Datasheet
1.HYS64D16020GD.pdf
(22 pages)
Table 10
Parameter
Write preamble
Address and control input setup time
Address and control input hold time
Read preamble
Read preamble setup time
Read postamble
Active to Precharge command
Active to Active/Auto-refresh command
period
Auto-refresh to Active/Auto-refresh
command period
Active to Read or Write delay
Precharge command period
Active to Autoprecharge delay
Active bank A to Active bank B
command
Write recovery time
Auto precharge write recovery +
precharge time
Internal write to read command delay
Exit self-refresh to non-read command
Exit self-refresh to read command
Average Periodic Refresh Interval
1) 0 °C ≤
2) Input slew rate ≥ 1 V/ns for DDR266, and = 1 V/ns for DDR200
3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference
4) Inputs are not recognized as valid until
5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is
6) These parameters guarantee device timing, but they are not necessarily tested on each device.
Data Sheet
level for signals other than CK/CK, is
T
A
≤ 70 °C;
AC Timing - Absolute Specifications –8/–7
V
DDQ
= 2.5 V ± 0.2 V,
V
REF
V
V
REF
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
DD
. CK/CK slew rate are ≥ 1.0 V/ns.
WPRE
IS
IH
RPRE
RPRE1.5
RPRES
RPST
RAS
RC
RFC
RCD
RP
RAP
RRD
WR
DAL
WTR
WTR1.5
XSNR
XSRD
REFI
stabilizes.
= +2.5 V ± 0.2 V
Min
.
0.2
5
1.1 —
1.1 —
1.1 —
1.1 —
0.9 1.1
0.9 1.1
1.5 —
0.4
0
50
70
80
20
20
20
15
15
1
2
80
200 —
—
DDR200
17
Max.
—
0.60
120E+3
—
—
—
—
—
—
—
—
—
—
7.8
–8
(
t
wr
/
t
CK
Unbuffered DDR SDRAM SO Modules
) + (
Min.
0.25
0.9
1.0
0.9
1.0
0.9
NA
NA
0.40
45
65
75
20
20
20
15
15
1
—
75
200
—
t
DDR266A
rp
/
t
CK
–7
)
Max.
—
—
—
—
—
1.1
0.60
120E+3 ns
—
—
—
—
—
—
—
—
—
—
—
7.8
HYS64D16020GD(L)-[7/8]-A
Electrical Characteristics
Unit
t
ns
ns
ns
ns
t
t
ns
t
ns
ns
ns
ns
ns
ns
ns
t
t
t
ns
t
µs
CK
CK
CK
CK
CK
CK
CK
CK
11042003-YIV7-VK6M
Rev. 1.02, 2004-01
Note/
Test Condition
2)3)4)5)
fast slew rate
3)4)5)6)10)
slow slew rate
3)4)5)6)10)
fast slew rate
3)4)5)6)10)
slow slew rate
3)4)5)6)10)
CL > 1.5
CL = 1.5
2)3)4)5)12)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)13)
CL > 1.5
CL = 1.5
2)3)4)5)
2)3)4)5)
2)3)4)5)14)
2)3)4)5)
2)3)4)5)11)
2)3)4)5)
2)3)4)5)
V
TT
1)
.