hys64v64220gbdl Infineon Technologies Corporation, hys64v64220gbdl Datasheet - Page 11
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hys64v64220gbdl
Manufacturer Part Number
hys64v64220gbdl
Description
So-dimm Sdram Modules
Manufacturer
Infineon Technologies Corporation
Datasheet
1.HYS64V64220GBDL.pdf
(13 pages)
Serial Presence Detects
A serial presence detect storage device - E
about the module configuration, speed, etc. is written into the E
production using a serial presence detect protocol ( I
SPD-Table:
Infineon Technologies
Byte#
10
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
11
0
1
2
3
4
5
6
7
8
9
Number of SPD bytes
Total bytes in Serial PD
Memory Type
Number of Row Addresses
(without BS)
Number of Column Addresses
Number of DIMM Banks
Module Data Width
Module Data Width (cont’d)
Module Interface Levels
SDRAM Cycle Time at CL=3
SDRAM Access time from Clock at
CL=3
Dimm Config (Error Det/Corr.)
Refresh Rate/Type
SDRAM width, Primary
Error Checking SDRAM data width
Minimum clock delay for back-to-
back random column address
Burst Length supported
Number of SDRAM banks
Supported CAS Latencies
CS Latencies
WE Latencies
SDRAM DIMM module attributes
SDRAM Device Attributes :General
SDRAM Cycle Time at CL = 2
SDRAM Access Time from Clock at
CL=2
SDRAM Cycle Time at CL = 1
SDRAM Access Time from Clock at
CL=1
Minimum Row Precharge Time
Description
2
Self-Refresh, 7,6µs
SPD Entry Value
PROM - is assembled onto the module. Information
Write latency = 0
non buffered/non
VDD tol +/- 10%
7.5ns / 10.0 ns
CS latency = 0
7.5ns / 10.0 ns
not supported
not supported
5.4ns / 6.0 ns
5.4ns / 6.0 ns
t
ccd
1, 2, 4 & 8
11
SDRAM
LVTTL
20 ns
2, & 3
none
144 pin SO-DIMM SDRAM Modules
= 1 CLK
reg.
128
256
n/a
12
10
64
x8
2
0
2
2
C synchronous 2-wire bus)
HYS64V64220GBDL-7/7.5/8-D
64Mx64
2
0F
75
54
75
54
00
00
-7
PROM device during module
64Mx64
-7.5
0D
0A
0F
0E
FF
FF
80
08
04
02
40
00
01
75
54
00
82
08
00
01
04
06
01
01
00
Hex
A0
60
14
2002-08-06
64Mx64
A0
FF
FF
60
-8