hys64v64220gbdl Infineon Technologies Corporation, hys64v64220gbdl Datasheet - Page 8

• Manufacturer Part Number: hys64v64220gbdl
• Description: So-dimm Sdram Modules
• Manufacturer: Infineon Technologies Corporation

AC Characteristics 9)10)
T
T
Parameter
Row Active Time
Row Cycle Time
Row Cycle Time during Auto
Refresh
Activate(a) to Activate(b)
Command period
CAS(a) to CAS(b) Command
period
Refresh Cycle
Refresh Period (8192 cycles)
Self Refresh Exit Time
Read Cycle
Data Out Hold Time
Data Out to Low Impedance Time
Data Out to High Impedance Time
DQM Data Out Disable Latency
Write Cycle
Last Data Input to Precharge
(Write without AutoPrecharge)
Last Data Input to Activate
(Write with AutoPrecharge)
DQM Write Mask Latency
Infineon Technologies
A
A
= 0 to 70 °C;
= 0 to 70
o
C; V
V
SS
SS
= 0 V;
= 0 V; V
V
DD
DD
, V
= 3.3 V ± 0.3 V,
Symbol
t
DAL,min
t
t
t
t
t
t
t
t
SREX
t
DDQ
t
t
t
DQW
t
RAS
RFC
RRD
CCD
REF
DQZ
OH
WR
RC
HZ
LZ
= 3.3 V ± 0.3 V, tT = 1 ns
min.
37
60
63
14
14
PC133-
1
–
1
3
0
3
–
0
222
-7
max. min.
100k
t
8
64
T
–
–
–
–
–
–
7
2
–
–
144 pin SO-DIMM SDRAM Modules
= 1 ns
Limit Values
45
67
67
15
15
PC133-
1
–
1
3
0
3
–
0
-7.5
333
HYS64V64220GBDL-7/7.5/8-D
max. min.
100k
64
–
–
–
–
–
–
7
2
–
–
48
70
70
16
15
PC100-
1
–
1
3
0
3
–
0
222
-8
max.
100k
64
–
–
–
–
–
8
2
–
–
Unit
ns
ns
ns
ns
CLK
ms
CLK
ns
ns
ns
CLK
ns
CLK
CLK
5
5
5
2,
6
7
8
2002-08-06