hys64v64220gbdl Infineon Technologies Corporation, hys64v64220gbdl Datasheet - Page 6

• Manufacturer Part Number: hys64v64220gbdl
• Description: So-dimm Sdram Modules
• Manufacturer: Infineon Technologies Corporation

Operating Currents per memory bank
(T
(Recommended Operating Conditions unless otherwise noted)
Infineon Technologies
OPERATING CURRENT
trc=trcmin.,
All banks operated in random access,
all banks operated in ping-pong manner
PRECHARGE STANDBY CURRENT
in Power Down Mode
CS =VIH (min.), CKE<=Vil(max)
PRECHARGE STANDBY CURRENT
in Non-Power Down Mode
CS = VIH (min.), CKE>=Vih(min)
NO OPERATING CURRENT
tck = min., CS = VIH(min),
active state ( max. 4 banks)
BURST OPERATING CURRENT
tck = min.,
Read command cycling
AUTO REFRESH CURRENT
tck = min., trc = trcmin.
Auto Refresh command cycling
SELF REFRESH CURRENT
Self Refresh Mode, CKE=0.2V
tck =infinity
A
Parameter & Test Condition
Notes:
1. These parameters depend on the cycle rate. These values are measured at 133 MHz operation frequency for PC133
2. These parameters are measured with continuous data stream during read access and all DQ toggling. CL=3 and BL=4
= 0 to 70
and at 100MHz for PC100 modules. Input signals are changed once during tck, excepts for ICC6 and for standby currents
when tck=infinity.
is assumed and the data-out current is excluded.
o
C, V
DD
= 3.3V ± 0.3V)
tck = min.
tck = min.
CKE>=VIH(min.)
CKE<=VIL(max.)
6
144 pin SO-DIMM SDRAM Modules
Symb.
ICC2P
ICC2N
ICC3N
ICC3P
ICC1
ICC4
ICC5
ICC6
HYS64V64220GBDL-7/7.5/8-D
PC133
1840
1200
1920
320
400
16
80
14
512Mbyte
64Mx64
PC100
1360
1760
240
360
800
16
80
14
mA
mA
mA
mA
mA
mA
mA
mA
2002-08-06
Note
1, 2
1, 2
1
1
1
1
1
1