ws57c291c-55t STMicroelectronics, ws57c291c-55t Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/6/637/stmicroelectronics_sml.jpg)
ws57c291c-55t
Manufacturer Part Number
ws57c291c-55t
Description
High Speed Cmos Prom/rprom
Manufacturer
STMicroelectronics
Datasheet
1.WS57C291C-55T.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
WS57C291C-55T
Manufacturer:
WSI
Quantity:
380
Company:
Part Number:
WS57C291C-55T
Manufacturer:
WSI
Quantity:
380
WS57C191C/291C
NOTES: 4. This parameter is only sampled and is not 100% tested.
TEST LOAD
2-10
CAPACITANCE
NOTE: 6. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters.
SYMBOL
2.01 V
D.U.T.
C
C
C
IN
OUT
VPP
5.Typical values are for TA = 25°C and nominal supply voltages.
A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between V
Inadequate decoupling may result in access time degradation or other transient performance failures.
(High Impedance Test Systems)
98
(4)
Input Capacitance
Output Capacitance
V
PP
T
PARAMETER
A
Capacitance
= 25°C, f = 1 MHz
30 pF
(INCLUDING SCOPE
AND JIG
CAPACITANCE)
CONDITIONS
V
V
V
IN
OUT
PP
= 0V
= 0 V
= 0V
A.C. TESTING INPUT/OUTPUT WAVEFORM
A.C. testing inputs are driven at 3.0 V for a logic "1" and 0.0 V for a
logic "0." Timing measurements are made at 1.5 V for input and
output transitions in both directions.
3.0
0.0
TYP
18
1.5
4
8
(5)
CC
POINTS
TEST
and ground is recommended.
MAX
12
25
6
1.5
UNITS
pF
pF
pF