m366s3253bts Samsung Semiconductor, Inc., m366s3253bts Datasheet

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m366s3253bts

Manufacturer Part Number
m366s3253bts
Description
32mx64 Sdram Dimm Based On 32mx8, 4banks, 8k Refresh, 3.3v Synchronous Drams With Spd
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
M366S3253BTS
PC133 Unbuffered DIMM
Revision History
Revision 0.0 (May, 2000)
• PC133 first published.
Revision 0.1 (July, 2000)
• Added PC100@CL3 data on DC Characteristics, Operating AC Parameter, AC Characteristics.
REV. 0.1 July. 2000

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m366s3253bts Summary of contents

Page 1

... M366S3253BTS Revision History Revision 0.0 (May, 2000) • PC133 first published. Revision 0.1 (July, 2000) • Added PC100@CL3 data on DC Characteristics, Operating AC Parameter, AC Characteristics. PC133 Unbuffered DIMM REV. 0.1 July. 2000 ...

Page 2

... GENERAL DESCRIPTION The Samsung M366S3253BTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S3253BTS consists of eight CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy sub- strate ...

Page 3

... M366S3253BTS PIN CONFIGURATION DESCRIPTION Pin Name CLK System clock CS Chip select CKE Clock enable A0 ~ A12 Address BA0 ~ BA1 Bank select address RAS Row address strobe CAS Column address strobe WE Write enable DQM0 ~ 7 Data input/output mask DQ0 ~ 63 Data input/output WP Write protection V /V Power supply/ground ...

Page 4

... M366S3253BTS FUNCTIONAL BLOCK DIAGRAM CS0 DQM0 DQM CS DQ0 DQ0 DQ1 DQ1 DQ2 DQ2 U0 DQ3 DQ3 DQ4 DQ4 DQ5 DQ5 DQ6 DQ6 DQ7 DQ7 DQM1 DQM CS DQ8 DQ0 DQ9 DQ1 DQ10 DQ2 U1 DQ11 DQ3 DQ12 DQ4 DQ13 DQ5 DQ14 DQ6 DQ15 DQ7 ...

Page 5

... M366S3253BTS ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. ...

Page 6

... M366S3253BTS DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, T Parameter Symbol Operating current I CC1 (One bank active Precharge standby current in CC2 power-down mode I PS CC2 I N CC2 Precharge standby current in non power-down mode I NS CC2 I P CC3 Active standby current in power-down mode ...

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... M366S3253BTS AC OPERATING TEST CONDITIONS Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition 3.3V 1200 Output 50pF 870 (Fig output load circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) ...

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... M366S3253BTS AC CHARACTERISTICS (AC operating conditions unless otherwise noted) REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE. Parameter CLK cycle time CAS latency=3 CLK to valid CAS latency=3 output delay Output data CAS latency=3 hold time CLK high pulse width CLK low pulse width ...

Page 9

... M366S3253BTS SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self refresh Exit Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto precharge disable column address Auto precharge enable ...

Page 10

... M366S3253BTS PACKAGE DIMENSIONS 0.118 (3.000) 0.125 0.375 (3.175) (9.525) 0.096 (2.44) A .118DIA 0.004 (3.000DIA 0.100) 0.350 (8.890) .450 (11.430) 0.250 (6.350) 0.123 0.005 (3.125 0.125) 0.079 0.004 (2.000 0.100) Detail A Tolerances : .005(.13) unless otherwise specified The used device is 32Mx8 SDRAM, TSOP SDRAM Part No. : K4S560832B-TC75 5 ...

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