lis3l02as STMicroelectronics, lis3l02as Datasheet - Page 3

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lis3l02as

Manufacturer Part Number
lis3l02as
Description
Inertial Sensor 3axis - 2g/6g Linear Accelerometer
Manufacturer
STMicroelectronics
Datasheet

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0
ELECTRICAL CHARACTERISTCS (Temperature range -40° C to +85° C)
1
1.1 Sensing element
The THELMA process is utilized to create a surface micro-machined accelerometer. The technology al-
lows to carry out suspended silicon structures which are attached to the substrate in a few points called
anchors and free to move on a plane parallel to the substrate itself. To be compatible with the traditional
packaging techniques a cap is placed on top of the sensing element to avoid blocking the moving parts
during the molding phase.
The equivalent circuit for the sensing element is shown in the below figure; when a linear acceleration is
applied, the proof mass displaces from its nominal position, causing an imbalance in the capacitive half-
bridge. This imbalance is measured using charge integration in response to a voltage pulse applied to the
sense capacitor.
The nominal value of the capacitors, at steady state, is few pF and when an acceleration is applied the
maximum variation of the capacitive load is few tenth of pF.
Symbol
Cload
Rout
Vdd
Voff
Idd
Vst
NL
fuc
So
an
Ar
Vt
FUNCTIONALITY
Supply voltage
Supply current
Zero-g level
Acceleration range
Sensitivity ratiometric to Vdd
Non Linearity
Sensing Element Resonant
Frequency
Acceleration noise density
Self test output voltage
Ratiometric to Vdd
Self test input
Output impedance
Capacitive load drive
Parameter
T = 25°C
0V on FS pin
Vdd on FS pin
T = 25°C
Full-scale = 2g
T = 25°C
Full-scale = 6g
Best fit straight line
X, Y axis
Full-scale = 2g
Best fit straight line
Z axis
Full-scale = 2g
X, Y axis
Z axis
Vdd=5V
Full-scale = 2g
T = 25°C
@ 5V
Logic 0 level
Logic 1 level
ratiometric to Vdd
Test Condition
Vdd/15–10%
Vdd/5–10%
Vdd/2-10%
Min.
320
2.8
1.8
3
0
Vdd/15
Vdd/2
Vdd/5
± 6.0
Typ.
TBD
100
100
1.0
2.5
4.0
2.0
0.3
0.6
Vdd/15+10%
Vdd/2+10%
Vdd/5+10%
Max.
5.25
Vdd
0.8
2.2
LIS3L02AS
g/
Unit
KHz
KHz
mA
V/g
V/g
k
pF
%
%
V
V
V
V
V
g
g
Hz
3/7

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