k9f4008w0a Samsung Semiconductor, Inc., k9f4008w0a Datasheet - Page 2

• Manufacturer Part Number: k9f4008w0a
• Description: 512k X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F4008W0A-TCB0, K9F4008W0A-TIB0
512K x 8 Bit NAND Flash Memory
FEATURES
PIN CONFIGURATION
- Memory Cell Array : 512K x 8 bit
- Data Register
- Frame Program : 32 Byte in 500 s
- Block Erase : 4K Byte in 6ms
- Random Access : 15 s(Max.)
- Serial Frame Access : 120ns(Min.)
- 10 A Standby Current
- 10mA Read/ Program/Erase Current
- Endurance : 100K Program/Erase Cycles
- 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
Voltage Supply: 3.0V~5.5V
Organization
Automatic Program and Erase (Typical)
32-Byte Frame Read Operation
Command/Address/Data Multiplexed I/O port
Low Operation Current (Typical)
Reliable CMOS Floating-Gate Technology
Package
NOTE : Connect all V
Do not leave V
VSS
VSS
CLE
ALE
I/O0
I/O1
I/O2
I/O3
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
WE
WP
44(40) TSOP (II)
: 32 x 8 bit
10
11
12
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
CC
CC,
and V
V
SS
SS
or GND inputs disconnected.
pins of each device to common power supply outputs.
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
VCC
CE
RE
R/B
GND
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
VCC
2
GENERAL DESCRIPTION
The K9F4008W0A is a 512Kx8bit NAND Flash Memory. Its
NAND cell structure provides the most cost-effective solution
for Digital Audio Recording. A Program operation programs a
32-byte frame in typical 500 s and an Erase operation erase a
4K-byte block in typical 6ms. Data in a frame can be read out at
a burst cycle rate of 120ns/byte. The I/O pins serve as the ports
for address and data input/output as well as for command
inputs. The on-chip write controller automates the program and
erase operations, including program or erase pulse repetition
where required, and performs internal verification of cell data.
The K9F4008W0A is an optimum solution for flash memory
application that do not require the high performance levels or
capacity of larger density flash memories. These application
include
Devices(TAD) and other consumer applications that require
voice data storage.
PIN DESCRIPTION
I/O
Pin Name
GND
0
CLE
ALE
WE
WP
R/B
V
V
N.C
CE
RE
~ I/O
CC
SS
data
7
storage
Data Inputs/Outputs
Command Latch Enable
Address Latch Enable
Chip Enable
Read Enable
Write Enable
Write Protect
Ground Input
Ready/Busy output
Power
Ground
No Connection
in
FLASH MEMORY
digital
Pin Function
Telephone
Answering