k9f4008w0a Samsung Semiconductor, Inc., k9f4008w0a Datasheet - Page 23
k9f4008w0a
Manufacturer Part Number
k9f4008w0a
Description
512k X 8 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K9F4008W0A.pdf
(24 pages)
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DATA PROTECTTION
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
during power-up and power-down and recovery time of minimum 1 s is required before internal circuit gets ready for any command
sequences as shown in Figure 11. The two step command sequence for program/erase provides additional software protection.
Figure 11. AC Waveforms for Power Transition
Package Dimensions
WP
WE
V
CC
~ 2.5V
10 s
High
23
FLASH MEMORY
~ 2.5V
IL