k9f4008w0a Samsung Semiconductor, Inc., k9f4008w0a Datasheet - Page 3

• Manufacturer Part Number: k9f4008w0a
• Description: 512k X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F4008W0A-TCB0, K9F4008W0A-TIB0
Figure 1. FUNCTIONAL BLOCK DIAGRAM
Figure 2. ARRAY ORGANIZATION
(=128 Blocks)
NOTE : *(1) : X can be V
4K Rows
2nd Cycle
3rd Cycle
1st Cycle
* The device ignores any additional input of address cycles than reguired.
CE
RE
WE
Command
I/O
A
A
A
A
A
16
0
8
7
0
0
- A
1
- A
IL
18
6
or V
I/O
The 1st Block (4KB)
A
A
A
128Bytes
17
Frame Register
IH
1
9
32 Bytes
1
2
& High Voltage
CLE ALE WP
Control Logic
Command
X-Buffers
Latches
& Decoders
Y-Buffers
Latches
& Decoders
Generator
I/O
A
A
Register
A
10
18
2
2
3
I/O
X*
A
A
11
3
(1)
3
4
I/O
A
A
X*
12
4
4
3
I/O
I/O
A
A
X*
0
13
5
~ I/O
5
32Byte x 4Frames x 4096Rows
7
8 bit
NAND Flash ARRAY
I/O Buffers & Latches
Page Register & S/A
I/O
1 Block = 32 Rows = 4K Bytes
A
1 Frame = 32 Bytes
1 Row
1 Device = 32Bytes x 4Frames x 32Rows x 128Blocks
A
*X
Global Buffers
14
6
6
Good Block
1Block = 32 Rows
Y-Gating
4M Bit
= 4 Frames = 128 Bytes
I/O
A
A
*X
= 4Mbits
= 4K Bytes
15
7
7
Column Address (A
Frame Address (A
Row Address (A
Block Address (A
FLASH MEMORY
I/O
I/O
0
7
7
-A
12
5
-A
11
-A
0
-A
)
6
18
)
4
)
)