ipb020ne7n3g Infineon Technologies Corporation, ipb020ne7n3g Datasheet
ipb020ne7n3g
Available stocks
Related parts for ipb020ne7n3g
ipb020ne7n3g Summary of contents
Page 1
OptiMOS TM 3 Power-Transistor Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • N-channel, normal level • 100% avalanche ...
Page 2
Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 4) ...
Page 3
Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...
Page 4
Power dissipation P =f(T ) tot C 350 300 250 200 150 100 Safe operating area I =f =25 ° parameter limited ...
Page 5
Typ. output characteristics I =f =25 ° parameter 400 350 300 250 200 150 100 Typ. transfer characteristics I =f(V ); ...
Page 6
Drain-source on-state resistance R =f =100 A; V DS(on max -60 - Typ. capacitances C =f MHz DS GS ...
Page 7
Avalanche characteristics =25 Ω parameter: T j(start) 1000 100 Drain-source breakdown voltage V =f BR(DSS ...
Page 8
PG-TO263-3 (D²-Pak) Rev. 2.0 page 8 IPB020NE7N3 G 2009-05-26 ...
Page 9
Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...