ipb020ne7n3g Infineon Technologies Corporation, ipb020ne7n3g Datasheet - Page 5

• Manufacturer Part Number: ipb020ne7n3g
• Description: Optimos Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
400
350
300
250
200
150
100
400
350
300
250
200
150
100
50
50
DS
GS
0
0
); T
0
0
); |V
10 V
j
=25 °C
j
GS
DS
|>2|I
1
7 V
2
D
|R
DS(on)max
175 °C
2
V
V
GS
DS
4
[V]
[V]
3
25 °C
6
4
5.5 V
4.5 V
6 V
5 V
page 5
5
8
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
250
200
150
100
6
5
4
3
2
1
0
50
D
=f(I
0
0
); T
0
D
j
); T
=25 °C
GS
5 V
j
=25 °C
100
50
5.5 V
I
I
D
200
D
[A]
[A]
IPB020NE7N3 G
100
300
6 V
7 V
10 V
2009-05-26
400
150