ipb020ne7n3g Infineon Technologies Corporation, ipb020ne7n3g Datasheet - Page 4

• Manufacturer Part Number: ipb020ne7n3g
• Description: Optimos Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
350
300
250
200
150
100
10
10
10
10
50
DS
0
3
2
1
0
10
C
0
); T
)
-1
limited by on-state
resistance
C
p
=25 °C; D =0
50
10
0
T
V
C
DS
100
[°C]
[V]
DC
10
10 ms
1
1 ms
150
100 µs
10 µs
1 µs
200
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
140
120
100
=f(t
10
10
10
80
60
40
20
C
0
-1
-2
0
); V
10
p
0
)
-5
0.02
0.01
0.05
0.2
0.5
0.1
single pulse
GS
≥10 V
p
10
/T
-4
50
10
-3
T
t
C
100
p
[°C]
[s]
10
IPB020NE7N3 G
-2
150
10
-1
2009-05-26
200
10
0