ipb020ne7n3g Infineon Technologies Corporation, ipb020ne7n3g Datasheet - Page 7

• Manufacturer Part Number: ipb020ne7n3g
• Description: Optimos Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
1000
100
10
90
80
70
60
AV
1
-60
0.1
=f(T
); R
j
GS
); I
j(start)
=25 Ω
-20
D
1
=1 mA
20
10
t
T
AV
j
60
[°C]
[µs]
150 °C
100
100
100 °C
1000
140
25 °C
10000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=100 A pulsed
g s
40
Q
Q
gate
g
Q
80
sw
[nC]
Q
g d
IPB020NE7N3 G
20 V
120
60 V
Q
40 V
g ate
2009-05-26
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