buk9560-100a NXP Semiconductors, buk9560-100a Datasheet - Page 8

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buk9560-100a

Manufacturer Part Number
buk9560-100a
Description
Trenchmos Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
9397 750 07771
Product specification
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
V
V
GS
DS
function of gate-source voltage; typical values.
= 25 V
= 0 V
I D
(A)
50
40
30
20
10
0
0
1
T j = 175 o C
2
T j = 25 o C
3
I S
(A)
V GS (V)
70
60
50
40
30
20
10
0
03nc71
0.0
4
Rev. 01 — 22 January 2001
BUK9560-100A; BUK9660-100A
0.5
T j = 175 o C
Fig 14. Gate-source voltage as a function of turn-on
T
1.0
j
= 25 C; I
gate charge; typical values.
V SD (V)
T j = 25 o C
V GS
(V)
5
4
3
2
1
0
03nc68
0
D
1.5
= 15 A
10
V DD = 14 V
TrenchMOS™ logic level FET
20
V DD = 80 V
© Philips Electronics N.V. 2001. All rights reserved.
30
Q G (nC)
03nc69
40
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