buk76150-55a NXP Semiconductors, buk76150-55a Datasheet - Page 5

• Manufacturer Part Number: buk76150-55a
• Description: Trenchmos Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 12342
Product data
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
j
d
s
(BR)DSS
GS(th)
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified.
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
Conditions
I
Figure 9
V
V
V
Figure 7
V
I
V
f = 1 MHz;
V
V
from drain lead 6 mm from
package to center of die
from contact screw on
mounting base to center of
die SOT78
from upper edge of drain
mounting base to center of
die SOT404
from source lead 6 mm from
package to source bond pad
D
D
D
DS
GS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 0.25 mA; V
= 1 mA; V
= 3 A;
j
j
j
j
j
j
j
j
j
= 55 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 20 V; V
= 10 V; I
= 25 C
= 175 C
= 10 V; V
= 0 V; V
= 25 V; R
= 10 V; R
Rev. 02 — 25 November 2003
and
Figure 14
Figure 12
DS
DS
D
8
GS
DD
L
G
= 5 A;
DS
= V
GS
= 25 V;
= 2.7 ;
= 5.6
= 0 V
= 44 V;
= 0 V
= 0 V
GS
;
Min
55
50
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BUK75/76150-55A
TrenchMOS™ standard level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Typ
-
-
3
-
-
0.05
-
2
127
-
5.5
1
2.7
242
40
25
3
26
8
10
4.5
3.5
2.5
7.5
Max
-
-
4
-
4.4
10
500
100
150
300
-
-
-
322
48
35
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
nA
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
nH
5 of 15
A
A