k4b2g0846b Samsung Semiconductor, Inc., k4b2g0846b Datasheet - Page 12

• Manufacturer Part Number: k4b2g0846b
• Description: 2gb B-die Ddr3 Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G04(08/16)46B
5.0 DDR3 SDRAM Addressing
1Gb
2Gb
4Gb
8Gb
Note 1 : Page size is the number of bytes of data delivered from the array to the internal sense amplifiers when an ACTIVE command is registered.
Page size is per bank, calculated as follows:
where, COLBITS = the number of column address bits,
BC switch on the fly
BC switch on the fly
BC switch on the fly
BC switch on the fly
Column Address
Column Address
Column Address
Column Address
Auto precharge
Auto precharge
Auto precharge
Auto precharge
Configuration
Configuration
Configuration
Configuration
Bank Address
Bank Address
Bank Address
Bank Address
Row Address
Row Address
Row Address
Row Address
Page size
Page size
Page size
Page size
# of Bank
# of Bank
# of Bank
# of Bank
*1
*1
*1
*1
A
0
256Mb x 4
512Mb x 4
BA0 - BA2
A
BA0 - BA2
A
BA0 - BA2
A
BA0 - BA2
- A
1Gb x 4
2Gb x 4
A
0
A
0
A
0
A
A
A
A
A
A
A
A
A
0
1 KB
0
1 KB
0
1 KB
0
2 KB
- A
- A
- A
12
12
12
12
10
10
10
10
9,
- A
- A
- A
- A
8
8
8
8
/BC
/BC
/BC
/BC
/AP
/AP
/AP
/AP
A
9,
9,
9,
page size = 2
11,
13
A
14
A
15
A
15
11
11
11
Page 12 of 61
A
13
ORG = the number of I/O (DQ) bits
COLBITS
* ORG
128Mb x 8
256Mb x 8
512Mb x 8
BA0 - BA2
BA0 - BA2
BA0 - BA2
BA0 - BA2
A
÷
1Gb x 8
A
A
A
A
0
A
A
A
A
A
A
A
A
8
A
A
A
0
1 KB
0
1 KB
0
1 KB
0
2 KB
- A
10
0
12
10
0
12
10
0
12
10
12
- A
- A
- A
- A
8
8
8
8
- A
- A
- A
/AP
/BC
/AP
/BC
/AP
/BC
/AP
/BC
9,
13
14
15
15
A
9
9
9
11
2Gb DDR3 SDRAM
Rev. 1.0 December 2008
128Mb x 16
256Mb x 16
512Mb x 16
64Mb x 16
BA0 - BA2
BA0 - BA2
BA0 - BA2
BA0 - BA2
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
0
2 KB
0
2 KB
0
2 KB
0
2 KB
12
12
12
12
10
0
10
0
10
0
10
0
- A
- A
- A
- A
8
8
8
8
- A
- A
- A
- A
/AP
/BC
/AP
/BC
/AP
/BC
/AP
/BC
12
13
14
15
9
9
9
9