k4b2g0846b Samsung Semiconductor, Inc., k4b2g0846b Datasheet - Page 27

• Manufacturer Part Number: k4b2g0846b
• Description: 2gb B-die Ddr3 Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G04(08/16)46B
Figure 14. Definition of tAON
Figure 15. Definition of tAONPD
Figure 16. Definition of tAOF
CK
CK
CK
CK
CK
CK
DQ, DM
DQS , DQS
TDQS , TDQS
DQ, DM
DQS , DQS
TDQS , TDQS
DQ, DM
DQS , DQS
TDQS , TDQS
Begin point : Rising edge of CK - CK
defined by the end point of ODTLon
Begin point : Rising edge of CK - CK
with ODT being first registered high
Begin point : Rising edge of CK - CK
defined by the end point of ODTLoff
V
RTT_Nom
V
V
SSQ
SSQ
V
SW2
V
SW1
End point Extrapolated point at V
End point Extrapolated point at V
t
T
t
T
t
End point Extrapolated point at V
AON
AONPD
AOF
SW1
SW1
T
T
T
SW2
SW2
SW2
T
SW1
V
V
SW1
SW1
V
V
Page 27 of 61
SW2
SW2
SSQ
SSQ
RTT_Nom
TD_TAON_DEF
V
V
V
SSQ
SSQ
SSQ
V
V
V
TT
TT
TT
2Gb DDR3 SDRAM
Rev. 1.0 December 2008