k4b2g0846b Samsung Semiconductor, Inc., k4b2g0846b Datasheet - Page 52

• Manufacturer Part Number: k4b2g0846b
• Description: 2gb B-die Ddr3 Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G04(08/16)46B
[ Table 50 ] Derating values DDR3-1333/1600 tIS/tIH-ac/dc based - Alternate AC150 Threshold
[ Table 51 ] Required time t
CMD/
ADD
Slew
V/ns
rate
Slew Rate[V/ns]
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
< 0.5
>2.0
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
∆tIS
-10
-25
75
50
-1
0
0
0
0
4.0 V/ns
∆tIH
-10
-16
-26
-40
-60
50
34
-4
VAC
0
Alternate AC150 Threshold -> V
above V
∆tIS
-10
-25
75
50
-1
0
0
0
0
3.0 V/ns
IH
(AC) {blow V
∆tIH
-10
-16
-26
-40
-60
50
34
-4
0
min
75
57
50
38
34
29
22
13
0
0
∆tIS
-10
-25
75
50
-1
0
0
0
0
2.0 V/ns
t
∆tIS, ∆tIH Derating [ps] AC/DC based
VAC
IL
(AC)} for valid transition
@175mV [ps]
∆tIH
-10
-16
-26
-40
-60
50
34
-4
0
IH
(AC) = V
Page 52 of 61
CLK,CLK Differential Slew Rate
∆tIS
-17
83
58
-2
8
8
8
8
7
1.8 V/ns
REF
(DC) + 150mV, V
∆tIH
max
-18
-32
-52
58
42
-2
-8
8
4
-
-
-
-
-
-
-
-
-
-
∆tIS
91
66
16
16
16
16
15
-9
6
1.6 V/ns
IL
∆tIH
-10
-24
-44
66
50
16
12
(AC) = V
6
0
∆tIS
99
74
24
24
24
24
23
14
-1
REF
1.4V/ns
min
175
170
167
163
162
161
159
155
150
150
(DC) - 150mV
2Gb DDR3 SDRAM
∆tIH
-16
-36
74
58
24
20
14
-2
8
t
Rev. 1.0 December 2008
VAC
@150mV [ps]
∆tIS
107
82
32
32
32
32
31
22
7
1.2V/ns
∆tIH
-26
84
68
34
30
24
18
-6
8
max
∆tIS
115
-
-
-
-
-
-
-
-
-
-
90
40
40
40
40
39
30
15
1.0V/ns
∆tIH
100
-10
84
50
46
40
34
24
10