emh2801 Sanyo Semiconductor Corporation, emh2801 Datasheet - Page 2

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emh2801

Manufacturer Part Number
emh2801
Description
Mosfet P-channel Silicon Mosfet Sbd Schottky Barrier Diode
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
emh2801-TL-H
Manufacturer:
ON Semiconductor
Quantity:
2 200
Continued from preceding page.
Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
(MOSFET)
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
--4.5V
P.G
0V
PW=10μs
D.C.≤1%
V IN
Parameter
Parameter
V IN
G
50Ω
V DD = --10V
D
S
I D = --1.5A
R L =6.67Ω
EMH2801
V RRM
V RSM
I O
I FSM
Tj
Tstg
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
V R
V F 1
V F 2
I R
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
C
Symbol
Symbol
V OUT
Rectangular wave
50Hz sine wave, 1 cycle
I D =--1mA, V GS =0V
V DS =--20V, V GS =0V
V GS =±8V, V DS =0V
V DS =--10V, I D =--1mA
V DS =--10V, I D =--1.5A
I D =--1.5A, V GS =--4.5V
I D =--1A, V GS =- -2.5V
I D =--0.5A, V GS =--1.8V
I R =1mA
I F =1.0A
I F =2.0A
V R =7.5V
V R =10V, f=1MHz
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =--10V, V GS =--4.5V, I D =--3A
V DS =--10V, V GS =--4.5V, I D =--3A
V DS =--10V, V GS =--4.5V, I D =--3A
I S =--3A, V GS =0V
EMH2801
t rr Test Circuit
(SBD)
Conditions
Duty≤10%
Conditions
10μs
50Ω
--5V
100Ω
min
--0.4
--20
15
10Ω
Ratings
typ
--0.83
Ratings
0.33
0.39
320
155
3.6
7.1
4.0
0.6
1.1
65
98
66
50
21
37
32
35
--55 to +125
--55 to +125
max
--1.3
--1.2
0.39
0.46
±10
300
137
235
2.0
15
15
20
--1
85
No. A1821-2/5
t rr
Unit
Unit
°C
°C
μA
μA
pF
pF
pF
nC
nC
nC
μA
pF
ns
ns
ns
ns
A
A
S
V
V
V
V
V
V
V
V

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