tpcm8001-h TOSHIBA Semiconductor CORPORATION, tpcm8001-h Datasheet - Page 2

• Manufacturer Part Number: tpcm8001-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type Ultra-high-speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Marking
Thermal resistance, channel to case
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: • on
M8001
H
(Note 5)
* Weekly code: (Three digits)
DD
the
※
= 24 V, T
Characteristic
lower left of the marking indicates Pin 1.
(a)
Part No. (or abbreviation code)
Lot No.
ch
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
= 25°C (initial), L = 0.2 mH, R
25.4 × 25.4 × 0.8
(Tc=25°C)
(Note 2a)
(Note 2b)
FR-4
(Unit: mm)
R
R
R
Symbol
th (ch-c)
th (ch-a)
th (ch-a)
G
2
= 25 Ω, I
Max
4.17
54.3
125
(b) Device mounted on a glass-epoxy board (b)
AR
°C/W
°C/W
°C/W
Unit
= 20 A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCM8001-H
2006-11-16