tpcm8001-h TOSHIBA Semiconductor CORPORATION, tpcm8001-h Datasheet - Page 4

• Manufacturer Part Number: tpcm8001-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type Ultra-high-speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
0.1
20
16
12
50
40
30
20
10
10
8
4
0
0
1
0.1
0
0
4.5
Common source
V DS = 10 V
Pulse test
5
6
Common source
V DS = 10 V
Pulse test
8
10
Ta = −55°C
Drain-source voltage V
Gate-source voltage V
1
0.2
Drain current I
4
100
2
3.8
1
0.4
25
⎪Y
I
I
D
D
25
fs
– V
– V
⎪ − I
3
3.6
DS
GS
Ta = −55°C
100
0.6
D
D
10
4
GS
Common source
DS
(A)
Ta = 25°C
Pulse test
0.8
V GS = 2.8 V
(V)
(V)
3.4
5
3.3
3.0
3.2
100
1.0
6
4
100
0.5
0.4
0.3
0.2
0.1
50
40
30
20
10
10
0
0
1
0.1
0
0
Common source
Ta = 25°C
Pulse test
5
6
8
10
Drain-source voltage V
Gate-source voltage V
0.4
2
Drain current I
5
4.5
1
R
0.8
V
DS (ON)
4
I
DS
D
4.2
– V
– V
DS
4
GS
− I
1.2
6
V GS = 4.5 V
D
D
Common source
Ta = 25°C
Pulse test
10
Common source
GS
DS
(A)
Pulse test
Ta = 25°C
TPCM8001-H
10
1.6
(V)
V GS = 3 V
(V)
8
I D
=
2006-11-16
20 A
10
3.6
3.4
3.8
3.2
100
2.0
10