tpcm8001-h TOSHIBA Semiconductor CORPORATION, tpcm8001-h Datasheet - Page 5

• Manufacturer Part Number: tpcm8001-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type Ultra-high-speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
20
16
12
10
8
4
0
−80
0
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1)
(2)
Common source
Pulse test
V GS = 4.5 V
V GS = 10 V
−40
Drain-source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
40
Capacitance – V
0
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
ｔ＝10s
1
R
DS (ON)
P
D
40
80
− Ta
10
− Ta
I D = 20 A
80
10
DS
DS
I D = 20, 10, 5 A
120
°
°
(V)
C)
C)
120
5
C oss
C rss
C iss
100
160
160
5
100
2.5
2.0
1.5
1.0
0.5
10
50
40
30
20
10
−80
1
0
0
0
0
V DS
10
−40
Drain-source voltage V
Ambient temperature Ta (
−0.2
Total gate charge Q
V GS
8
4.5
8
Dynamic input/output
3
0
16
characteristics
−0.4
16
I
DR
V
th
V DD
− V
40
− Ta
1
=
DS
−0.6
32 V
24
80
Common source
I D = 20 A
Ta = 25°C
Pulse test
g
DS
Common source
Ta = 25°C
Pulse test
Common source
V DS = 10 V
I D = 1 mA
Pulse test
(nC)
TPCM8001-H
V GS = 0 V
−0.8
32
°
(V)
C)
120
2006-11-16
−1.0
160
40
20
16
12
8
4
0