pa28f004sc-120 Intel Corporation, pa28f004sc-120 Datasheet - Page 30

• Manufacturer Part Number: pa28f004sc-120
• Description: 8-mbit 1-mbit X 8 Flashfiletm Memory
• Manufacturer: Intel Corporation

28F008SA
ALTERNATIVE CE -CONTROLLED WRITES
NOTES
1 Chip-Enable Controlled Writes Write operations are driven by the valid combination of CE
CE
measured relative to the CE
2 Sampled not 100% tested
3 Refer to Table 3 for valid A
4 Refer to Table 3 for valid D
5 Byte write and block erase durations are measured to completion (SR 7
V
6 See High Speed AC Input Output Reference Waveforms and High Speed AC Testing Load Circuits for testing characteris-
tics
7 See AC Input Output Reference Waveforms and AC Testing Load Circuits for testing characteristics
30
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
PPH
AVAV
PHEL
WLEL
ELEH
VPEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHRL
EHQV1
EHQV2
EHGL
QVVL
Symbol
defines the write pulsewidth (within a longer WE
until determination of byte write block erase success (SR 3 4 5
t
t
t
t
t
t
t
t
t
t
t
t
WC
PS
WS
CP
VPS
AS
DS
DH
AH
WH
EPH
VPH
Versions
Write Cycle Time
RP
CE
WE
Low
CE
V
High
Address Setup to CE
Going High
Data Setup to CE
High
Data Hold from CE
Address Hold from CE
High
WE
CE
CE
Going Low
Duration of Byte Write
Operation
Duration of Block Erase
Operation
Write Recovery before
Read
V
RY BY
PP
PP
Setup to CE
Hold from Valid SRD
High Recovery to
Going Low
Pulse Width
Pulse Width High
High to RY BY
Setup to CE
Hold from CE
Parameter
High
IN
IN
waveform
for byte write or block erasure
for byte write or block erasure
Going
Going
Going
High
High
V
V
CC g
CC g
Notes
10%
2 5
5%
2
2
3
4
5
5
timing waveform) all setup hold and inactive WE
28F008SA-85
Min
100
0 3
85
50
40
40
25
1
0
5
5
0
6
0
0
Max
100
e
(6)
0)
e
28F008SA-85
Min
100
1 RY BY
0 3
90
50
40
40
25
1
0
5
5
0
6
0
0
Max
100
(7)
e
and WE
V
OH
28F008SA-120
Min
120
100
) V
0 3
50
40
40
25
1
0
5
5
0
6
0
0
PP
should be held at
In systems where
times should be
Max
100
(7)
Unit
sec
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns