bgy282-n NXP Semiconductors, bgy282-n Datasheet - Page 5

• Manufacturer Part Number: bgy282-n
• Description: Bgy282 Dual Band Uhf Amplifier Module For Gsm900 And Gsm1800
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2002 Apr 9
t
t
P
CG
CG
SYMBOL
r
f
n
Dual band UHF amplifier module for GSM900 and
GSM1800
carrier rise time
carrier fall time
noise power GSM900
noise power GSM1800
AM/PM conversion
AM/AM conversion
conversion gain GSM900
conversion gain GSM1800
3 dB control bandwidth
GSM900, GSM1800
power drop 4 slot burst
GSM900, GSM1800
ruggedness
PARAMETER
P
time to settle within −0.5 dB of final P
P
time to settle within −0.5 dB of final P
P
f = 925 MHz
P
f = 935 MHz
P
f = 1805 MHz
P
P
P
P
P
P
P
P
P
CG = P
P
P
P
CG = P
P
V
δ = 1 : 8 and δ = 4 : 8
V
P
P
all phases
V
P
P
through all phases
V
P
P
all phases; δ = 4 : 8
L1
L1
L1
L1
L2
D1,2
L1
L1,2
D1,2
L1
L2
D1
L1
i1
D2
L2
i2
L1
APC
S1,2
D2
L2
S1,2
D2
L2
S1,2
D2
L2
= −50 dBm @ 905 MHz;
= −50 dBm @ 1765 MHz;
= 5 to 34 dBm; P
= 5 to 34 dBm; P
≤ 34 dBm; bandwidth = 100 kHz;
≤ 34 dBm; bandwidth = 100 kHz;
≤ 32 dBm; bandwidth = 100 kHz;
= 5 to 34 dBm; P
= 5 to 34.7 dBm;
= 0 to 32.3 dBm
= 34 dBm;
= 32 dBm;
= 5 to 34 dBm; P
= <33 dBm; VSWR ≤6 : 1 through
= <33 dBm; VSWR ≤10 : 1
= <32 dBm; VSWR ≤6 : 1 through
= 0 dBm @ 915 MHz;
= 0 dBm @ 1785 MHz;
= 0 to 5 dBm; P
= 0 to 5 dBm; P
= 0 to 5 dBm P
= constant during measurement
= 2.2 V; difference P
= 5 V; P
= 4.2 V; P
= 4.2 V; P
= −0.5 to 0.5 dBm;
= 4 %; f = 100 kHz;
925
1805
− P
− P
CONDITIONS
D1
i1
5
i2
D1
D1
= 0 to 3 dBm;
= 0 to 3 dBm;
= 0 to 3 dBm;
L1
L1
L1
L2
L2
L2
L2
= <34 dBm;
= <35 dBm;
= <35 dBm;
= 0 to 32 dBm;
= 0 to 32 dBm;
= 0 to 32 dBm;
= 0 to 32 dBm
L
with
L
L
−
−
−
−
−
−
−
−
−
0.5
−
MIN.
no degradation
no degradation
no degradation
1.5
1.5
−
−
−
−
−
25
25
−
−
TYP.
Preliminary specification
2
2
−71
−80
−76
6
30
−
−
−
0.4
MAX.
BGY282
µs
µs
dBm
dBm
dBm
deg/dB
%
dB
dB
MHz
dB
UNIT