hat2172ns Renesas Electronics Corporation., hat2172ns Datasheet
hat2172ns
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hat2172ns Summary of contents
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HAT2172N Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable gate drive Low drive current High density mounting Low on-resistance R = 6.1 m typ. ( DS(on) GS Outline ...
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HAT2172N Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input ...
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HAT2172N Main Characteristics Power vs. Temperature Derating 100 Case Temperature Tc (°C) Typical Output Characteristics 4 4 Drain to Source Voltage V ...
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HAT2172N Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test – Case Temperature Tc (°C) ...
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HAT2172N Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 Source to Drain Voltage 0.5 0.3 0.1 0.03 0.01 10 µ REJ03G1683-0100 ...
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HAT2172N Avalanche Test Circuit V DS Monitor Rg Vin Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V REJ03G1683-0100 Rev.1.00 May 28, 2008 Page Monitor ...
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HAT2172N Package Dimensions JEITA Package Code RENESAS Code Package Name LFPAK-i PTSP0008DC-A 4.9 5.3Max 8 1 3.3 1.27 Ordering Information Part No. HAT2172N-EL-E 2500 pcs REJ03G1683-0100 Rev.1.00 May 28, 2008 Page Previous Code MASS[Typ.] LFPAK-iV 0.080g ...
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Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...