hat2172ns Renesas Electronics Corporation., hat2172ns Datasheet - Page 5

• Manufacturer Part Number: hat2172ns
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2172N
REJ03G1683-0100 Rev.1.00 May 28, 2008
Page 5 of 7
50
40
30
20
10
0
Source to Drain Voltage V
Reverse Drain Current vs.
Source to Drain Voltage
0.4
0.03
0.01
10 V
0.3
0.1
5 V
3
1
10 µ
0.8
0.5
D = 1
V
GS
1.2
Normalized Transient Thermal Impedance vs. Pulse Width
= 0, –5 V
100 µ
Pulse Test
1.6
SD
(V)
2.0
1 m
Pulse Width PW (s)
10 m
50
40
30
20
10
P
0
25
θch - c(t) = γs (t) • θch - c
θch - c = 6.25°C/ W, Tc = 25°C
DM
100 m
Channel Temperature Tch (°C)
Maximum Avalanche Energy vs.
Channel Temperature Derating
50
PW
T
75
1
Tc = 25°C
100
D =
I
V
duty < 0.1 %
Rg ≥ 50 Ω
AP
DD
PW
T
= 20 A
125
= 15 V
10
150