hat2185wp Renesas Electronics Corporation., hat2185wp Datasheet - Page 3
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hat2185wp
Manufacturer Part Number
hat2185wp
Description
Silicon N Channel Power Mos Fet Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.HAT2185WP.pdf
(7 pages)
HAT2185WP
Main Characteristics
REJ03G1744-0200 Nov 28, 2008
Page 3 of 6
0.001
0.01
Static Drain to Source on State Resistance
100
0.1
0.8
0.6
0.4
0.2
10
20
16
12
1
8
4
0
1
0
0.1
−25
Operation in this
area is limited by
R
Drain to Source Voltage
Gate to Source Voltage
Tc = 25°C
1 shot
V
Pulse Test
DS(on)
Pulse Test
V
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
Case Temperature
GS
0
vs. Temperature (Typical)
= 10 V
= 10 V
2
Tc = 75°C
1
25
4
50
10
I
D
75
= 10 A
6
25°C
−25°C
100 125 150
Tc (°C)
100
V
V
5 A
8
GS
DS
(V)
(V)
1000
10
1000
0.01
100
Static Drain to Source on State Resistance
0.1
10
20
16
12
1
1
8
4
0
0
1
Drain to Source Voltage
Drain to Source Voltage
Drain to Source Voltage (Typical)
Pulse Test
Ta = 25°C
10 V
Pulse Test
V
Ta = 25°C
V
f = 1 MHz
Ta = 25°C
Typical Output Characteristics
9 V
GS
GS
vs. Drain Current (Typical)
= 10 V
= 0
Typical Capacitance vs.
20
2
Drain Current
40
4
10
8 V
60
7.6 V
6
I
D
(A)
V
V
80
8
DS
DS
6.6 V
Coss
5.5 V
Crss
Ciss
7 V
6 V
(V)
(V)
100
100
10