hat2185wp Renesas Electronics Corporation., hat2185wp Datasheet - Page 4

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hat2185wp

Manufacturer Part Number
hat2185wp
Description
Silicon N Channel Power Mos Fet Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
HAT2185WP
REJ03G1744-0200 Nov 28, 2008
Page 4 of 6
240
180
120
60
5
4
3
2
1
0
Dynamic Input Characteristics (Typical)
-25
0
V
I
Ta = 25°C
vs. Case Temperature (Typical)
DS
D
Gate to Source Cutoff Voltage
Case Temperature
I
= 10 A
D
0
Gate Charge
= 10 mA
4
25
V
DD
1 mA
8
= 120 V
50
60 V
30 V
0.1 mA
75
12
Qg (nC)
120 V
V
60 V
100 125 150
V
Tc (°C)
DS
DD
V
16
= 10 V
GS
= 30 V
20
16
12
8
4
0
20
12
16
4
8
0
Source to Drain Voltage V
Source to Drain Voltage (Typical)
Reverse Drain Current vs.
5 V
0.4
10 V
0.8
V
GS
1.2
= 0, −5 V
Pulse Test
Ta = 25 °C
1.6
SD
(V)
2.0

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