hat2037t Renesas Electronics Corporation., hat2037t Datasheet - Page 3

• Manufacturer Part Number: hat2037t
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

Main Characteristics
2.0
1.5
1.0
0.5
50
40
30
20
10
0
0
Test Condition :
Drain to Source Voltage
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Power vs. Temperature Derating
Ambient Temperature
Typical Output Characteristics
10V
5 V
4 V
2
50
4
100
V
6
GS
Pulse Test
= 1.5 V
150
V
Ta ( C)
2.5 V
DS
8
3 V
(V)
200
10
0.03
0.01
100
0.3
0.1
30
10
50
40
30
20
10
3
1
0.1
0
Note 4 :
Drain to Source Voltage
Ta = 25 C
1 shot Pulse
Gate to Source Voltage
Operation in
this area is
limited by R
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
Maximum Safe Operation Area
0.3
1
1
–25 C
25 C
DS(on)
2
3
3
100 s
10 s
10
Tc = 75 C
V
Pulse Test
DS
V
V
HAT2037T
GS
DS
4
30
= 10 V
(V)
(V)
100
5
3