hat2037t Renesas Electronics Corporation., hat2037t Datasheet - Page 4

• Manufacturer Part Number: hat2037t
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2037T
4
0.25
0.20
0.15
0.10
0.05
–40
50
40
30
20
10
0
0
Static Drain to Source on State Resistance
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
GS
Case Temperature
4 V
2
0
Gate to Source Voltage
= 2.5 V
vs. Temperature
40
4
I = 5 A
D
80
6
5, 2, 1 A
Pulse Test
I
Pulse Test
Tc
D
V
2 A 1 A
= 5 A
120
8
GS
2 A
1 A
(°C)
(V)
160
10
0.005
0.002
0.05
0.02
0.01
0.5
0.2
0.1
50
20
10
5
2
1
Static Drain to Source on State Resistance
0.2
0.2
Pulse Test
Forward Transfer Admittance vs.
0.5
0.5
Drain Current
Drain Current I
vs. Drain Current
Tc = –25 °C
1
1
Drain Current
25 °C
2
2
V
GS
I
V
Pulse Test
75 °C
D
D
5
DS
5
= 4 V
2.5 V
(A)
(A)
= 10 V
10
10
20
20