upa1816 Renesas Electronics Corporation., upa1816 Datasheet - Page 3

• Manufacturer Part Number: upa1816
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
-0.01
-100
-0.1
120
100
-10
80
60
40
20
-1
0
-0.1
0
FORWARD BIAS SAFE OPERATING AREA
Single Pulse
Mounted on ceramic
substrate of
5000 mm
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
R
(V
DS(on)
GS
25
V
T
= 4.5 V)
DS
I
A
D(DC)
Limited
- Ambient Temperature - C
- Drain to Source Voltage - V
2
50
x 1.1 mm
I
D(pulse)
-1
100
10
1
1 m
75
DC
100
-10
PW = 1 ms
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
A
10 m
125
= 25°C)
10 ms
100 ms
150
Data Sheet G16252EJ1V0DS
100 m
-100
175
PW - Pulse Width - s
1
Single Pulse
Mounted on ceramic
substrate of 5000 mm
2.5
1.5
0.5
2
1
0
0
10
Mounted on ceramic
substrate of
5000 mm
25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
- Ambient Temperature - C
2
50
100
x 1.1 mm
2
62.5°C/W
x 1.1 mm
75
100
1000
125
150
PA1816
175
3