upa1816 Renesas Electronics Corporation., upa1816 Datasheet - Page 4

• Manufacturer Part Number: upa1816
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
-0.8
-0.6
-0.4
-40
-30
-20
-10
40
30
20
10
-1
0
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
-50
-50
0
V
Pulsed
Pulsed
V
GS
GS
= 2.5 V, I
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
T
T
= 4.5 V
-0.2
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
DS
ch
V
ch
GS
- Channel Temperature - C
- Channel Temperature - C
0
- Drain to Source Voltage - V
0
= 1.8 V, I
V
GS
D
-0.4
= 4.5 A
= 4.5 V, I
V
GS
50
50
= 4.0 V, I
D
= 1.5 A
-0.6
4.0 V
D
= 4.5 A
V
I
D
100
DS
100
D
= 1.0 mA
1.8 V
= 4.5 A
-0.8
= 10 V
2.5 V
Data Sheet G16252EJ1V0DS
150
150
-1
-0.0001
-0.001
100
0.1
40
30
20
10
-0.01
10
-100
0
-0.1
1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
-0.01
-10
0
-1
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
Pulsed
0
FORWARD TRANSFER CHARACTERISTICS
DS
V
Pulsed
D S
= 10 V
V
GS
= 10 V
-0.1
-2
V
- Gate to Source Voltage - V
GS
-0.5
I
D
- Gate to Source Voltage - V
- Drain Current - A
I
D
-4
-1
= 4.5 A
-1
T
A
= 25°C
-10
T
-6
A
125°C
-1.5
25°C
75°C
Pulsed
= 125°C
PA1816
75°C
25°C
25°C
-100
-8
-2