upa1851gr-9jg Renesas Electronics Corporation., upa1851gr-9jg Datasheet

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upa1851gr-9jg

Manufacturer Part Number
upa1851gr-9jg
Description
P-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA1851GR-9JG.pdf (8 pages)
Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
driven directly by a 4.0
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1. PW
The
The PA1851 features a low on-state resistance and
Can be driven by a 4.0-V power source
Low on-state resistance
R
R
R
Built-in G-S protection diode against ESD
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
PA1851GR-9JG
2. Mounted on ceramic substrate of 50 cm
PA1851 is a switching device which can be
D12733EJ2V0DS00 (2nd edition)
February 2000 NS CP(K)
= 105 m
= 210 m
= 250 m
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
10 s, Duty Cycle
MAX. (V
MAX. (V
MAX. (V
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note1
-
V power source.
Note2
GS
GS
GS
= –10 V, I
= –4.5 V, I
= –4.0 V, I
I
D(pulse)
I
V
V
Power TSSOP8
D(DC)
T
T
P
DSS
GSS
stg
ch
PACKAGE
T
1 %
A
D
D
D
–55 to +150
The mark
= 25°C)
= –1.5 A)
= –1.5 A)
= –1.5 A)
FOR SWITCHING
–20/+5
! 2.5
–20
150
!
2.0
DATA SHEET
10
2
x 1.1 mm
shows major revised points.
MOS FIELD EFFECT TRANSISTOR
W
°C
°C
V
V
A
A
8
1
3.15 ±0.15
3.0 ±0.1
Gate1
Gate
Protection
Diode
0.27
0.65
PACKAGE DRAWING (Unit : mm)
+0.03
–0.08
5
4
0.8 MAX.
0.10 M
Source1
1
2, 3 :Source1
4
5
6, 7 :Source2
8
Drain1
EQUIVALENT CIRCUIT
:Drain1
:Gate1
:Gate2
:Drain2
Body
Diode
Gate2
Gate
Protection
Diode
©
1.2 MAX.
6.4 ±0.2
4.4 ±0.1
PA1851
1.0±0.05
0.1±0.05
3
+5
–3
Source2
Drain2
0.5
0.6
1997, 2000
1.0 ±0.2
0.25
0.1
+0.15
–0.1
Body
Diode

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upa1851gr-9jg Summary of contents

Page 1

P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1851 is a switching device which can be driven directly by a 4.0 V power source. - The PA1851 features a low on-state resistance and excellent switching characteristics, and is suitable for applications ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate ...

Page 3

TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚C A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 400 300 T = 125˚C A 75˚C 200 25˚C 25˚C 100 Drain Current - A D DRAIN TO SOURCE ON-STATE RESISTANCE vs. ...

Page 5

SWITCHING CHARACTERISTICS 1000 d(on) 100 t d(off GS(on 0 Drain Current - A D DYNAMIC INPUT CHARACTERISTICS 2.5 ...

Page 6

Data Sheet D12733EJ2V0DS00 PA1851 ...

Page 7

Data Sheet D12733EJ2V0DS00 PA1851 7 ...

Page 8

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means ...

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