upa1851gr-9jg Renesas Electronics Corporation., upa1851gr-9jg Datasheet - Page 4

• Manufacturer Part Number: upa1851gr-9jg
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
300
250
200
150
100
50
200
160
120
0
400
300
200
100
80
40
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
0
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.1
0.1
V
V
GS
GS
T
A
T
V
= 4.0 V
= 10 V
A
= 125˚C
GS
4
= 125˚C
- Gate to Source Voltage - V
75˚C
25˚C
25˚C
75˚C
25˚C
25˚C
I
I
D
D
- Drain Current - A
- Drain Current - A
1
8
1
12
10
I
D
16
= 1.5 A
Data Sheet D12733EJ2V0DS00
20
100
10
300
200
100
1000
400
300
200
100
100
0
10
50
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.1
1
I
V
D
GS
= 1.5 A
T
= 4.5 V
A
T
V
= 125˚C
ch
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
DS
0
- Channel Temperature - ˚C
75˚C
25˚C
25˚C
- Drain to Source Voltage - V
I
D
- Drain Current - A
1
V
GS
50
= 4.0 V
10
10
100
C
C
C
iss
oss
rss
4.5 V
10 V
f = 1 MHz
PA1851
150
100
100