upa1874gr-9jg Renesas Electronics Corporation., upa1874gr-9jg Datasheet - Page 3

• Manufacturer Part Number: upa1874gr-9jg
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
100
1.5
1.0
0.5
80
60
40
20
35
30
10
25
15
20
−50
0
5
0
0
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
I
D
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
DS
Pulsed
= 1 mA
= 10 V
T
V
30
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
ch
DS
T
A
0.1
0
- Drain to Source Voltage - V
- Channel Temperature - ˚C
- Ambient Temperature - ˚C
60
50
0.2
90
2.5 V
3.1 V
A
4.0 V
= 25°C)
100
V
0.3
120
GS
= 4.5 V
150
150
Data Sheet G15631EJ1V0DS
0.4
0.00001
0.0001
1000
0.001
0.01
0.01
100
100
0.01
100
0.1
0.1
0.1
10
0.01
10
10
1
1
1
0.01
0
Single Pulse
P
FORWARD
FORWARD BIAS SAFE OPERATING AREA
V
Pulsed
D
Pulsed
V
T
(FET1) : P
DS
DS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
A
= 10 V
= 10 V
= −25 ˚C
V
V
DS
GS
0.1
D
0.5
0.1
(FET2) = 1 : 1
- Drain to Source Voltage - V
- Gate to Sorce Voltage - V
TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
I
D(DC)
125 ˚C
1
25 ˚C
1
1
I
D(pulse)
1.5
10
10
75 ˚C
µ µ µ µ PA1874
100
100
2
3