upa1874gr-9jg Renesas Electronics Corporation., upa1874gr-9jg Datasheet - Page 5

• Manufacturer Part Number: upa1874gr-9jg
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

10000
1000
0.01
100
100
10
0.1
10
1
0.1
0.4
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
V
GS
=
V
0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
1000
SD
0.1
0.6
100
- Drain to Source Voltage - V
0.001
10
- Source to Drain Voltage - V
1
1
Single Pulse
P
D
(FET1) : P
0.8
0.01
D
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10
(FET2) = 1:1
1.0
f = 1 MHz
V
GS
C
C
C
oss
rss
= 0 V
iss
0.1
Data Sheet G15631EJ1V0DS
100
1.2
PW - Pulse Width - s
Mounted on Ceramic board of 50 cm
1
Mounted on FR-4 board of 25 cm
1000
100
10
10
0.1
4
3
2
1
0
5
0
62.5˚C/W
V
V
R
t
t
t
t
d(off)
d(on)
f
r
DD
GS
G
I
125˚C/W
D
= 10 Ω
= 10 V
=
= 8.0 A
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
4
V
5
100
V
Q
I
D
DD
1
G
- Drain Current - A
2
2
- Gate Charge - nC
= 24 V
x 1.1 mm
x 1.6 mm
15 V
6 V
10
1000
10
15
µ µ µ µ PA1874
100
20
5