upa1916 Renesas Electronics Corporation., upa1916 Datasheet

upa1916

Manufacturer Part Number

upa1916

Description

P-channel Mos Field Effect Transistor For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1916.pdf (8 pages)

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Part Number:

upa1916TE-T1

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

Note Marking: TL

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

directly by a 1.8 V power source.

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC) (T

Drain Current (pulse)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

Notes 1. PW

The PA1916 is a switching device which can be driven

This device features a low on-state resistance and excellent

1.8 V drive available

Low on-state resistance

DS(on)1

DS(on)2

DS(on)3

DS(on)4

PART NUMBER

2. Mounted on FR-4 board, t

PA1916TE

G15635EJ1V0DS00 (1st edition)

December 2001 NS CP(K)

= 39 m

= 49 m

= 55 m

= 98 m

The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

10 s, Duty Cycle

Note

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

MAX. (V

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

Note1

= 25°C)

= 0 V)

SC-95 (Mini Mold Thin Type)

= –4.5 V, I

= –3.0 V, I

= –2.5 V, I

= –1.8 V, I

Note2

PACKAGE

5 sec.

= –2.5 A)

= –1.5 A)

= 25°C)

FOR SWITCHING

D(pulse)

D(DC)

GSS

DATA SHEET

DSS

stg

–55 to +150

m8.0

m4.5

MOS FIELD EFFECT TRANSISTOR

–12

m18

150

0.2

2.0

°C

0.32

+0.1

–0.05

PACKAGE DRAWING (Unit: mm)

0.95

2.9 ±0.2

1.9

0.95

EQUIVALENT CIRCUIT

Gate

Protection

Diode

1, 2, 5, 6 : Drain

PA1916

: Gate

: Source

Source

Drain

0.9 to 1.1

0.65

Body

Diode

0.16

0 to 0.1

+0.1

–0.06

2001

Related parts for upa1916

upa1916 Summary of contents

Page 1

P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1916 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚C A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 20 Pulsed 16 V ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 125 0.01 0 Drain Current - A D DRAIN TO ...

Page 5

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 MHz V GS 1000 C iss C oss C rss 100 10 0.1 1 Drain to Source Voltage - V DS SOURCE TO DRAIN DIODE FORWARD VOLTAGE ...

Page 6

Data Sheet G15635EJ1V0DS PA1916 ...

Page 7

Data Sheet G15635EJ1V0DS PA1916 7 ...

Page 8

The information in this document is current as of December, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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