upa1916 Renesas Electronics Corporation., upa1916 Datasheet - Page 2

• Manufacturer Part Number: upa1916
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
GS ( )
0
TEST CIRCUIT 1 SWITCHING TIME
Duty Cycle
PG.
= 1 s
CHARACTERISTICS
R
1%
G
D.U.T.
R
V
L
DD
V
Wave Form
V
Wave Form
GS
DS
SYMBOL
R
R
R
R
V
V
| y
t
t
Q
Q
I
I
DS(on)1
DS(on)2
DS(on)3
DS(on)4
C
C
GS(off)
C
d(off)
Q
F(S-D)
A
GSS
d(on)
DSS
t
t
oss
GS
GD
V
V
fs
iss
rss
r
f
G
V
= 25°C)
GS( )
DS( )
|
0
DS
0
10 %
t
d(on)
90 %
Data Sheet G15635EJ1V0DS
V
R
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
I
I
D
F
GS
DS
GS
DS
DS
GS
GS
GS
GS
DS
GS
DD
G
DD
GS
= 4.5 A, V
t
= –4.5 A
on
= 10
= –10 V
= –12 V, V
= –10 V, I
= –10 V, I
= –10 V
= –6.0 V, I
= –4.0 V
= m8.0 V, V
= –4.5 V, I
= –3.0 V, I
= –2.5 V, I
= –1.8 V, I
= 0 V
= –4.0 V
10 % 10 %
t
r
V
t
GS
d(off)
GS
TEST CONDITIONS
D
D
t
D
D
D
D
D
GS
= 0 V
off
DS
= –1.0 mA
= –2.5 A
90 %
= –2.5 A
= –2.5 A
= –2.5 A
= –2.5 A
= –1.5 A
= 0 V
90 %
t
= 0 V
f
TEST CIRCUIT 2 GATE CHARGE
PG.
I
G
= 2 mA
50
–0.45
MIN.
3.0
D.U.T.
TYP.
–0.8
0.84
950
330
170
140
120
8.0
1.5
2.5
30
36
41
59
15
15
PA1916
MAX.
–1.5
–10
m10
39
49
55
98
R
V
L
DD
UNIT
m
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
S
V
A
A