upa1951 Renesas Electronics Corporation., upa1951 Datasheet - Page 3

• Manufacturer Part Number: upa1951
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
- 0.01
- 100
- 0.1
- 10
120
100
- 1
80
60
40
20
0
- 0.1
FORWARD BIAS SAFE OPERATING AREA
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Single pulse
M ounted on FR-4 board
of 5000 m m
R
(V
I
5 s (2 units)
5 s (1 unit)
D(DC)
DS(on)
GS
25
V
T
DS
= 4.5 V)
A
Lim ited
- Drain to Source Voltage - V
- Ambient Temperature - C
1000
50
100
10
- 1
I
2
D(pulse)
1
x 1.1 m m
1 m
75
100
- 10
PW = 1 m s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10 m
125
10 m s
100 m s
A
= 25°C)
150
P
D
(FET1) : P
Data Sheet G15613EJ1V0DS
- 100
100 m
175
PW - Pulse Width - s
P
D
D
(FET2) = 1: 0
(FET1) : P
1
1.2
0.8
0.6
0.4
0.2
D
1
0
Single pulse
Mounted on FR-4 board
of 5000 mm
(FET2) = 1: 1
10
0
25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
- Ambient Temperature - C
100
50
2
Mounted on FR-4 board of
5000 mm
x 1.1 mm
75
2
x 1.1 mm, t
100
1000
2 units
1 unit
125
150
5 sec.
PA1951
175
3