upa1951 Renesas Electronics Corporation., upa1951 Datasheet - Page 5

• Manufacturer Part Number: upa1951
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

1000
100
200
150
100
200
150
100
10
50
50
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0
- 0.01
0
- 0.01
- 0.1
V
Pulsed
V
Pulsed
t
f
GS
GS
SWITCHING CHARACTERISTICS
= 4.5 V
= 2.5 V
t
d(off)
t
r
I
I
I
T
D
D
D
- 0.1
- 0.1
A
- Drain Current - A
- Drain Current - A
- Drain Current - A
= 125°C
T
A
75°C
25°C
25°C
= 125°C
- 1
75°C
25°C
25°C
- 1
- 1
V
V
R
DD
GS
G
= 10
t
= 6.0 V
= 4.0 V
d(on)
Data Sheet G15613EJ1V0DS
- 10
- 10
- 10
1000
100
200
150
100
250
200
150
100
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
50
0
- 0.01
- 0.01
- 0.1
V
Pulsed
V
Pulsed
GS
GS
T
A
= 4.0 V
= 1.8 V
V
= 125°C
DS
T
75°C
25°C
25°C
A
- Drain to Source Voltage - V
I
I
= 125°C
D
D
- 0.1
- 0.1
- 1
- Drain Current - A
- Drain Current - A
75°C
25°C
25°C
- 10
- 1
- 1
V
f = 1.0 MHz
GS
C
C
C
iss
oss
rss
= 0 V
PA1951
- 100
- 10
- 10
5