upa1952 Renesas Electronics Corporation., upa1952 Datasheet

upa1952

Manufacturer Part Number

upa1952

Description

P-channel Mos Field Effect Transistor For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1952.pdf (8 pages)

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Document No. G15933EJ1V0DS00 (1st edition)

Date Published August 2002 NS CP(K)

Printed in Japan

ORDERING INFORMATION

Marking: TP

ABSOLUTE MAXIMUM RATINGS (T

Notes 1. PW

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

DESCRIPTION

directly by a 1.8 V power source.

switching characteristics, and is suitable for applications

such as power switch of portable machine and so on.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (2 units)

Total Power Dissipation (1 unit)

Channel Temperature

Storage Temperature

The

The device features a low on-state resistance and excellent

1.8 V drive available

Low on-state resistance

DS(on)1

DS(on)2

DS(on)3

2. Mounted on FR-4 board of 5000 mm

PART NUMBER

PA1952 is a switching device, which can be driven

= 135 m

= 183 m

= 284 m

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

PA1952TE

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

10 s, Duty Cycle

MAX. (V

Note1

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

= 0 V)

= 4.5V, I

= 2.5 V, I

= 1.8 V, I

Note2

SC-95 (Mini Mold Thin Type)

Note2

PACKAGE

= 1.0 A)

= 0.5 A)

= 25°C)

FOR SWITCHING

DATA SHEET

x 1.1 mm, t

D(pulse)

D(DC)

DSS

GSS

stg

MOS FIELD EFFECT TRANSISTOR

5 sec.

55 to +150

1.15

0.57

m8.0

m2.0

m8.0

150

0.32

6: Drain 1

1: Gate 1

5: Source 1

+0.1

–0.05

PACKAGE DRAWING (Unit: mm)

°C

0.95

Gate 1

2.9 ±0.2

Gate

Protection

Diode

1.9

0.95

EQUIVALENT CIRCUITS

4: Drain 2

3: Gate 2

2: Source 2

Source 1

Drain 1

PA1952

Body

Diode

0.9 to 1.1

Gate 2

Gate

Protection

Diode

0.65

0.16

0 to 0.1

Source 2

Drain 2

+0.1

–0.06

Body

Diode

2001

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upa1952 Summary of contents

Page 1

P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1952 is a switching device, which can be driven directly by a 1.8 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA - 100 I ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 8 Pulsed 0.2 - 0.4 - 0 Drain to Source ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 300 Pulsed 250 T = 125°C A 75°C 25°C 200 25°C 150 100 50 - 0. Drain Current - A D ...

Page 6

DYNAMIC INPUT/OUTPUT CHARACTERISTICS - 2 4 0 Gate Change - nC G ...

Page 7

Data Sheet G15933EJ1V0DS PA1952 7 ...

Page 8

The information in this document is current as of August, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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