upa1952 Renesas Electronics Corporation., upa1952 Datasheet - Page 4

• Manufacturer Part Number: upa1952
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
- 0.9
- 0.8
- 0.7
- 0.6
- 0.5
- 0.4
300
250
200
150
100
- 1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
- 8
- 6
- 4
- 2
50
0
-50
-50
0
Pulsed
Pulsed
V
GS
- 0.2
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
T
DS
= 2.5 V, I
ch
ch
V
- Drain to Source Voltage - V
- Channel Temperature - C
- Channel Temperature - °C
0
GS
0
- 0.4
= 1.8 V, I
V
1.8 V
V
GS
D
GS
= 1.0 A
= 4.5 V
- 0.6
= 4.5 V, I
50
50
D
2.5 V
= 0.5 A
- 0.8
V
I
D
D
DS
100
100
= 1.0 mA
= 1.0 A
= 10 V
- 1
Data Sheet G15933EJ1V0DS
- 1.2
150
150
- 0 .0 0 0 0 1
0.01
- 0 .0 0 0 1
300
250
200
150
100
0.1
- 0 .0 0 1
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
- 0 .0 1
1
- 0.01
- 0 .1
- 1 0
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
- 1
V
Pulsed
DS
FORWARD TRANSFER CHARACTERISTICS
0
V
= 10 V
GS
V
P u ls e d
D S
- Gate to Source Voltage - V
- 2
V
I
- 0 .5
=
D
- 0.1
GS
- Drain Current - A
- Gate to Source Voltage - V
1 0 V
I
D
= 1.0 A
- 4
- 1
- 1
T
- 1 .5
A
- 6
= 25°C
T
125°C
Pulsed
A
25°C
75°C
PA1952
= 1 2 5 °C
- 2
7 5 °C
2 5 °C
2 5 °C
- 10
- 8
- 2 .5