upa1476 Renesas Electronics Corporation., upa1476 Datasheet
upa1476
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NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR) DESCRIPTION The PA1476 is NPN silicon epitaxial Darlington Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. FEATURES • Easy mount ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTIC SYMBOL Collector Leakage Current I CBO Emitter Leakage Current I EBO DC Current Gain h FE1 DC Current Gain h FE2 Collector Saturation Voltage V CE(sat) Base Saturation Voltage V BE(sat) Turn On Time t on ...
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TYPICAL CHARACTERISTICS (T A DERATING CURVE OF SAFE OPERATING AREA 100 100 T - Case Temperature - ˚C C TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NEC PA1476 4 4 Circuits Operation 3 Circuits Operation ...
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TRANSIENT THERMAL RESISTANCE 100 10 1 0.1 0 Pulse Width - ms COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 2.0 1.6 1.2 0 0.4 0 1.0 2.0 3 Collector ...
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REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. PA1476 Document No. TEI-1202 IEI-1209 IEI-1207 ...
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No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. ...