upa1476 Renesas Electronics Corporation., upa1476 Datasheet - Page 2

• Manufacturer Part Number: upa1476
• Description: Npn Silicon Power Transistor Array Low Speed Switching Use Darlington Transistor Industrial Use
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
SWITCHING TIME TEST CIRCUIT
2
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
Collector Leakage Current
Emitter Leakage Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Turn On Time
Storage Time
Fall Time
* PW
CHARACTERISTIC
350 s, Duty Cycle
PW = 50
Duty Cycle
.
.
PW
V
IN
s
2 %
SYMBOL
I
I
h
h
V
V
t
t
t
CBO
EBO
on
stg
f
FE1
FE2
CE(sat)
BE(sat)
2 % / pulsed
*
*
*
*
V
BB
I
I
B1
B2
A
.
= –5 V
.
MIN.
2000
500
= 25 ˚C)
T.U.T.
I
R
C
L
= 50
.
.
TYP.
1.2
0.4
1
V
CC
MAX.
20000
.
= 50 V
.
1.0
1.0
1.5
2
Base Current
Wave Form
Collector
Current
Wave Form
UNIT
mA
—
—
V
V
A
s
s
s
t
on
V
V
V
V
I
I
I
I
V
See test circuit
C
C
C
B1
CB
EB
CE
CE
CC
= 1 A, I
= 1 A, I
= 1 A
90 %
= –I
10 %
= 5 V, I
= 2 V, I
= 2 V, I
= 75 V, I
= 50 V, R
.
.
TEST CONDITIONS
B2
t
stg
= 2 mA
B
B
C
C
C
= 1 mA
= 1 mA
t
f
E
= 0
= 1 A
= 2 A
L
= 0
= 50
.
I
I
.
B1
B2
I
C
PA1476