upa104g-e1 Renesas Electronics Corporation., upa104g-e1 Datasheet
upa104g-e1
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upa104g-e1 Summary of contents
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HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY • OUTSTANDING h LINEARITY FE • TWO PACKAGE OPTIONS: PA104B: Studded ceramic package provides superior thermal dissipation PA104G: Reduced circuit size due to 14-pin plastic SOP ...
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PACKAGE DIMENSIONS (UNIT: mm) 14 PIN CERAMIC PACKAGE TOP VIEW SIDE VIEW BOTTOM VIEW 14 PIN PLASTIC SOP (225 mil 10.2 0.26 1.49 1.27 +0.10 0.40 M 0.10 –0.05 0.1 0.1 +0.21 1.59 –0.20 NOTE Each lead centerline ...
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ELECTRICAL CHARACTERISTICS SYMBOLS PARAMETERS AND CONDITIONS I Collector Cutoff Current at V CBO CB I Emitter Cutoff Current at V EBO EB h Direct Current Amplification Collector to Base Capacitance Emitter to ...
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TYPICAL PERFORMANCE CHARACTERISTICS COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 10 100 Collector to Emitter Voltage CURRENT GAIN vs. COLLECTOR CURRENT 1000 ...
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TYPICAL APPLICATION t++ OUT (OR The application circuits and their parameters are for references only and are not intended for use in actual design-in' ...
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NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to maintain the minimum ground impedance (to prevent undesired oscillation). (3) Design circuits connected Sub pin to ...
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Data Sheet P10709EJ2V0DS00 PA104 7 ...
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NESAT (NEC Silicon Advanced Technology trademark of NEC Corporation. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. No part of this document may ...