upa104g-e1 Renesas Electronics Corporation., upa104g-e1 Datasheet - Page 4

• Manufacturer Part Number: upa104g-e1
• Description: High Frequency Npn Transistor Array
• Manufacturer: Renesas Electronics Corporation.

TYPICAL PERFORMANCE CHARACTERISTICS
4
1000
200
100
10
50
20
10
8
6
4
2
0
0.5
0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage, V
1
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current, I
1
2
2
100
I
5
B
= 20
3
10
C
V
(mA)
20
10
80
0
A
CE
1
60
20
4
= 3 V
40
CE
(V)
GAIN AND NOISE FIGURE OF
INDIVIDUAL TRANSISTOR
2
Data Sheet P10709EJ2V0DS00
Collector Current, I
50
GAIN
NF
5
5
10
(T
20
A
C
= +25 C)
V
f = 1 GHz
(mA)
CC
= 3 V
200
100
50 100
0.5
0.1
50
20
10
12
10
5
2
1
8
6
4
0
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
0.4
8
6
4
2
0
Base to Emitter Voltage, V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
1
Collector Current, I
0.5 0.6 0.7 0.8 0.9 1.0
2
5
V
CE
10
= 3 V
C
V
(mA)
CE
BE
20
= 5 V
1 V
(V)
3 V
1.1
50
PA104