k6t4016c3b Samsung Semiconductor, Inc., k6t4016c3b Datasheet - Page 2

• Manufacturer Part Number: k6t4016c3b
• Description: 256kx16 Bit Low Power Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

K6T4016C3B Family
PIN DESCRIPTION
FEATURES
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
256Kx16 bit Low Power CMOS Static RAM
PRODUCT FAMILY
1. The parameter is measured with 50pF test load.
A17
A16
A15
A14
A13
Vcc
Vss
I/OI
WE
CS
A4
A3
A2
A1
A0
I/O
Process Technology: TFT
Organization: 256Kx16
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 44-TSOP2-400F/R
Product Family
K6T4016C3B-B
Name
A
K6T4016C3B-F
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
0
1
WE
OE
CS
~A
~I/O
10
11
12
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
17
44-TSOP2
16
Forward
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Data Inputs/Outputs
Function
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
Operating Temperature Vcc Range
Commercial(0~70 C)
Industrial(-40~85 C)
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
A12
I/O16
I/O15
I/O14
I/O13
I/O12
I/O11
I/O10
I/O9
A10
A11
A12
Vss
Vcc
Name
OE
UB
NC
A5
A6
A7
LB
A8
A9
Vcc
Vss
UB
NC
LB
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
Power
Ground
Upper Byte(I/O
Lower Byte (I/O
No Connection
44-TSOP2
Reverse
Function
4.5~5.5V
9~16
10
11
12
13
14
15
16
17
18
19
20
21
22
1~8
1
2
3
4
5
6
7
8
9
)
)
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
55
55
1)
Speed
/70/100ns
2
1)
FUNCTIONAL BLOCK DIAGRAM
/70ns
I/O
GENERAL DESCRIPTION
advanced CMOS process technology. The families support
various operating temperature ranges and small package
types for user flexibility of system design. The families also
support low data retention voltage for battery back-up opera-
tion with low data retention current.
WE
OE
UB
LB
CS
The K6T4016C3B families are fabricated by SAMSUNG s
9
~I/O
I/O
16
1
~I/O
Control
logic
8
(I
Standby
SB1
A13
A14
A0
A1
A15
A16
A17
A2
A3
A4
20 A
50 A
Power Dissipation
, Max)
Clk gen.
Data
cont
Data
cont
Data
cont
Row
select
(I
Operating
CC2
130mA
, Max)
A8 A9 A10 A5 A6
CMOS SRAM
Precharge circuit.
Memory array
1024 rows
256 16 columns
Column select
I/O Circuit
44-TSOP2-400F/R
PKG Type
A7
Revision 5.0
A4
May 2001
A12
Vcc
Vss